Specialists of the RAS Lebedev Institute of Physics (FIAN) have designed laser diodes of a new generation operating in the spectral range of 1.060 nm. According to the Scientific Information Agency "FIAN-Inform", the permanent output of these high-efficiency diodes is up to 10 W.
In fact, we are dealing with solid-state lasers supplied with a semiconductor, or a crystal, developed on the basis of multilayer nanosize heterostructures* acting as a working medium. They were designed at the Ioffe Leningrad Institute of Physics and Technology** and used in practice in the AlGaAs-GaAs and GalnAsP-GaAs systems twenty years ago. Nevertheless, these devices, especially those generating 805-808 nm and 915-980 nm waves, are still in high demand since they are being widely used in electronic and nuclear engineering, and in high-tech medicine.
Diodes of modern lasers have small semiconductor crystals (0.1x0.5x3 mm). To pump their active area, safe low-voltage power supply sources with the operating voltage of about 2 Vare used. They are compact, portable and economical. It is not by chance that these very laser diodes, according to the Laser Focus journal (USA), make up over 60 percent of lasers produced worldwide.
The dynamic development of electronic engineering and other scientific and technical fields of knowledge calls for a constant upgrading of laser diodes, namely multiplication of their optical power, brightness, efficiency and service life. Almost all developed countries are involved with that. The USA, Germany, Britain, and France are among the world leaders. Good results in this field were also achieved by the RAS Prokhorov Institute of General Physics and FIAN (Moscow).
As reported by the Scientific Information Agency, in recent years scientists managed to increase the resource output power of lasers up to 8-10 W with the service life exceeding 5,000 hours, which is enough for solving many practical tasks. But their potential is not exh ... Читать далее